A comparison of performance between double-gate and gate-all-around nanowire MOSFET
نویسندگان
چکیده
منابع مشابه
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
متن کاملPerformance of Double Gate SOI MOSFET
The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET dev...
متن کاملA Study on Multi Material Gate All Around SOI MOSFET
As the continuous down scaling of MOSFET device is required to increase the speed and packaging density of it, but it reduces the device characteristics in terms of short channel effect and reverse leakage current. At present, the single gate MOSFET reaching its scaling limit. These limitations associated with scaling give birth to number of innovative techniques which includes the use of diffe...
متن کاملAn Extensive Evaluation of Futuristic Gate All Around Junctionless Nanowire MOSFET Using Numerical Simulation
This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slop...
متن کاملQuantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)
In this paper, electrical characteristics of the double gate metal oxide semiconductor field effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA SNWT) have been investigated. We have evaluated the variations of the threshold voltage, the subthreshold slope, draininduced barrier lowering, ON and OFF state currents when channel length decreases. Quantum mech...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Indonesian Journal of Electrical Engineering and Computer Science
سال: 2019
ISSN: 2502-4760,2502-4752
DOI: 10.11591/ijeecs.v13.i2.pp801-807